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D
S G D
S
G S
SO
2 T-
27
APT5010JN APT5012JN
500V 500V
48.0A 0.10 43.0A 0.12
ISOTOP(R)
"UL Recognized" File No. E145592 (S)
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
(R)
SINGLE DIE ISOTOP(R) PACKAGE
All Ratings: TC = 25C unless otherwise specified.
APT 5010JN APT 5012JN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
500 48 192 30 520 4.16
500 43 172
Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
and Inductive Current Clamped
Volts Watts W/C C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 A) On State Drain Current
2
MIN APT5010JN APT5012JN APT5010JN APT5012JN APT5010JN APT5012JN
TYP
MAX
UNIT Volts
500 500 48
Amps
ID(ON)
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
43 0.10
Ohms
RDS(ON)
0.12 250 1000 100 2 4
A nA Volts
IDSS IGSS VGS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 2.5mA)
THERMAL CHARACTERISTICS
Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT C/W
050-5037 Rev F
0.24 0.06
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5010/5012JN
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT
5570 1170 440 240 32 116 15 25 48 12
6500 1640 660 370 48 170 30 50 75 25
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
1
MIN APT5010JN APT5012JN APT5010JN APT5012JN
TYP
MAX
UNIT
48 43 192 172 1.8 415 8.3 830 16
Volts ns C Amps
2
(VGS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s)
PACKAGE CHARACTERISTICS
Symbol LD LS VIsolation CIsolation Torque Characteristic / Test Conditions Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT nH Volts
3 5 2500 35 13
pF in-lbs
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE 0.001 10-5 10-4
Note:
PDM
t1 t2 Duty Factor D = t1/t2
050-5037 Rev F
Z
JC
Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT5010/5012JN
100 VGS=8, 9, 10V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 7V 80 100
80
VGS=8, 9, 10V 7V
60 6V 40 5V
60 6V 40
20
20
5V
0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 TJ = -55C ID, DRAIN CURRENT (AMPERES) 80
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0
0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5
TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO = 10V @ 0.5 I [Cont.] V
GS D
0
2.0
TJ = +25C 60 TJ = +125C 40
1.5
VGS=10V VGS=20V
1.0
20
TJ = +125C TJ = +25C
TJ = -55C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 50 ID, DRAIN CURRENT (AMPERES)
0
0.5
0
40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.2
40
APT5010JN
1.1
30 APT5012JN 20
1.0
0.9
10
0.8
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
I = 0.5 I [Cont.]
D D
0
25
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4
0.7
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6 050-5037 Rev F
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50
APT5010/5012JN
300 ID, DRAIN CURRENT (AMPERES) 100 50
APT5010JN APT5012JN
OPERATION HERE LIMITED BY RDS (ON)
20,000 10S 10,000 100S C, CAPACITANCE (pF) 5,000 Coss 1,000 500 Crss 1mS Ciss
APT5010JN APT5012JN
10 5 10mS 100mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE DC
.1
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=100V VDS=250V
16
160
12 VDS=400V 8
120 TJ =+150C
80
4
40
TJ =+25C TJ =-55C
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP(R)) Package Outline
11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source
050-5037 Rev F
Gate
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.

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